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Dependence of hole’s effective mass on the spin polarization and temperature in quantum well
Dependence of hole’s effective mass on the spin polarization and temperature in quantum well
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Date
2023
Authors
Le Van Tan
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Research Projects
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Abstract
"The effective mass of holes (𝑚∗) in GaAs quantum wells is investigated as a function of spin polarization,
temperature, and carrier density using the Hartree–Fock approximation. The results reveal 𝑚∗ initially decreases
at low carrier densities before increasing with density. Additionally, as the interaction parameter increases,
𝑚∗ decreases rapidly. Especially, as the temperature rises to 200 K, 𝑚∗ asymptotically approaches a value
of 0.45𝑚0, where 𝑚0 is the electron mass. These findings provide insights into the influence of Coulomb
interaction and exchange energy on the effective mass of semiconductors across a wide range of temperatures,
spin polarizations, and densities"
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Keywords
"Hole effective mass,
2-dimensional,
Quantum well,
Spin polarization"