Publication:
Dependence of hole’s effective mass on the spin polarization and temperature in quantum well

dc.contributor.author Le Van Tan
dc.date.accessioned 2024-03-07T01:10:44Z
dc.date.available 2024-03-07T01:10:44Z
dc.date.issued 2023
dc.description.abstract "The effective mass of holes (𝑚∗) in GaAs quantum wells is investigated as a function of spin polarization, temperature, and carrier density using the Hartree–Fock approximation. The results reveal 𝑚∗ initially decreases at low carrier densities before increasing with density. Additionally, as the interaction parameter increases, 𝑚∗ decreases rapidly. Especially, as the temperature rises to 200 K, 𝑚∗ asymptotically approaches a value of 0.45𝑚0, where 𝑚0 is the electron mass. These findings provide insights into the influence of Coulomb interaction and exchange energy on the effective mass of semiconductors across a wide range of temperatures, spin polarizations, and densities"
dc.identifier.doi 10.1016/j.physb.2023.415364
dc.identifier.uri http://repository.vlu.edu.vn:443/handle/123456789/12857
dc.language.iso en_US
dc.relation.ispartof Physica B: Condensed Matter
dc.relation.issn 0921-4526
dc.subject "Hole effective mass
dc.subject 2-dimensional
dc.subject Quantum well
dc.subject Spin polarization"
dc.title Dependence of hole’s effective mass on the spin polarization and temperature in quantum well
dc.type journal-article
dspace.entity.type Publication
oaire.citation.volume 670
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